* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU
* Halogen-free according to IEC 61249-2-21 definition 2 1
VT4045BP Datasheet (171.91 KB)
VT4045BP
171.91 KB
Trench mos barrier schottky rectifier.
VT4045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V.
📁 Related Datasheet
VT4045BP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT400 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT4060C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VT4060C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VT43N1 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT43N2 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT43N3 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
