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VT4045BP-M3 Trench MOS Barrier Schottky Rectifier

VT4045BP-M3 Description

www.vishay.com VT4045BP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.2.

VT4045BP-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 PIN 1 PIN 2

VT4045BP-M3 Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads,

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Datasheet Details

Part number
VT4045BP-M3
Manufacturer
Vishay ↗
File Size
104.49 KB
Datasheet
VT4045BP-M3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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