* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PIN 1 PIN 2
VT4045BP-M3 Datasheet (104.49 KB)
VT4045BP-M3
104.49 KB
Trench mos barrier schottky rectifier.
www.vishay.com
VT4045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.2.
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