* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPL
VT4060C-E3 Datasheet (138.33 KB)
VT4060C-E3
138.33 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com
VT4060C-E3, VIT4060C-E3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
.
📁 Related Datasheet
VT4060C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VT400 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT4045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045BP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT4045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT43N1 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT43N2 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT43N3 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
