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VT4060C-E3 Dual Trench MOS Barrier Schottky Rectifier

VT4060C-E3 Description

www.vishay.com VT4060C-E3, VIT4060C-E3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A .

VT4060C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICAL APPL

VT4060C-E3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 60 V 240 A 0.48 V 150 °C TO-220AB, TO-262AA Diode variation Comm

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Datasheet Details

Part number
VT4060C-E3
Manufacturer
Vishay ↗
File Size
138.33 KB
Datasheet
VT4060C-E3-Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
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