VT6045CBP Datasheet - Vishay

VT6045CBP Trench MOS Barrier Schottky Rectifier

VT6045CBP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* TJ 200 °C max. in solar bypass mode application

* Material categorization: for definitions of co

Datasheet Details

VT6045CBP

128.85 KB

Trench mos barrier schottky rectifier.

📁 Related Datasheet

VT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT6045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT6045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT60M45C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT60M45CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT6102 PCI Fast Ethernet Controller with ACPI Function (Via Technologies)

VT6103 Fast Ethernet 10/100 Transceiver (VIA)

VT6105 Rhine III 10/100 Mbps PCI Fast Ethernet Controller (VIA)

TAGS

VT6045CBP Distributor