* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* TJ 200 °C max. in solar bypass mode application
* Material categorization: for definitions of co
VT6045CBP Datasheet (128.85 KB)
VT6045CBP
128.85 KB
Trench mos barrier schottky rectifier.
www.vishay.com
VT6045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 .
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