* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please see www.visha
VT60M45CHM3 Datasheet (121.17 KB)
VT60M45CHM3
121.17 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com
VT60M45C-M3, VT60M45CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V .
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