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VT60M45C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VT60M45C-M3 Description

www.vishay.com VT60M45C-M3, VT60M45CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V .

VT60M45C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please see www. visha

VT60M45C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 45 V 320 A 0.50 V 175 °C TO-220AB Diode variations Dual common

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Datasheet Details

Part number
VT60M45C-M3
Manufacturer
Vishay ↗
File Size
121.17 KB
Datasheet
VT60M45C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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