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SI1922EDH Dual N-Channel MOSFET

SI1922EDH Description

Dual N-Channel 20 V (D-S) MOSFET Si1922EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.198 at VGS = 4.5 V 0.225 at VGS = 2.5 V 0.263.

SI1922EDH Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Typical ESD Protection 2100 V HBM

SI1922EDH Applications

* Load Switch for Portable Applications D1 D2 1k G1 1k G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 TC = 25 °C 1.3a Continuous Drain Current (TJ = 150 °C) TC =

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Dual N-Channel MOSFET Vishay Siliconix
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