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SiE830DF N-Channel 30-V (D-S) MOSFET

SiE830DF Description

N-Channel 30-V (D-S) MOSFET SiE830DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0042 .

SiE830DF Features

* Halogen-free According to IEC 61249-2-21 Definition
* Extremely Low Qgd WFET® Technology for Low Switching Losses
* Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
* Leadframe-Based New Encapsulated Package - Die Not Exposed -

SiE830DF Applications

* VRM
* Point-of-Load
* Synchronous Rectification D G D GS S D 1 23 4 5 54 32 1 Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free) SiE830DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel

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N-Channel 30-V D-S MOSFET Vishay Siliconix
Vishay Siliconix SiE830DF-like datasheet