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2SC536 - NPN Transistor

Features

  • Power dissipation PCM:.

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Datasheet Details

Part number 2SC536
Manufacturer WEJ
File Size 107.17 KB
Description NPN Transistor
Datasheet download datasheet 2SC536 Datasheet

Full PDF Text Transcription

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2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.
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