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B5817W Datasheet - WEJ

B5817W SCHOTTKY BARRIER DIODE

B5817W Features

* DPower dissipation PD : 450 mW Tamb=25 TCollector current .,LIF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range OTJ Tstg: -55 to +150 CMARKING SJ Unit mm ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ONParameter Reverse breakdown voltage RRe

B5817W Datasheet (553.06 KB)

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Datasheet Details

Part number:

B5817W

Manufacturer:

WEJ

File Size:

553.06 KB

Description:

Schottky barrier diode.

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B5817W SCHOTTKY BARRIER DIODE WEJ

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