Part number:
BAL99LT1
Manufacturer:
WEJ
File Size:
154.34 KB
Description:
Diode.
* Power dissipation PD : 350 mW (Tamb=25 C) Pluse Drain DIF : 100 mA TReverse Voltage VR : 70V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR COANODE-CATHODE 3 IC1 2 ANODE CATHODE Marking:JF 2.9 1.9 0.95 0.95 0.4
BAL99LT1 Datasheet (154.34 KB)
BAL99LT1
WEJ
154.34 KB
Diode.
📁 Related Datasheet
BAL99LT1 CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) (Motorola Inc)
BAL99LT1 Switching Diode (ON Semiconductor)
BAL99LT1G Switching Diode (ON Semiconductor)
BAL99 SURFACE MOUNT SWITCHING DIODES (Pan Jit International Inc.)
BAL99 High-speed diode (NXP)
BAL99 Small Signal Fast Switching Diode (Vishay Telefunken)
BAL99 Silicon Switching Diode (For high-speed switching) (Siemens Semiconductor Group)
BAL99 SURFACE MOUNT SWITCHING DIODE (Diodes Incorporated)
BAL99 Small Signal Diodes (General Semiconductor)
BAL99 Silicon Switching Diode (Infineon Technologies AG)