TPT5609 - NPN Transistor
TPT5609 Features
* Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parame
