* NPN
* SBilaitccoh pnrocess design, excellent power dissipation offers better reverse leakage current and thermal resistance.
* Low profile surface mounted application in order to
* RoHS porpotdimucizt efobropaarcdksinpgacoed. e suffix "G", MHaoliosgt
* ueHLnr
MMBT2222LT1 Datasheet (550.28 KB)
MMBT2222LT1
WILLAS
550.28 KB
General purpose transistor.
WILLAS
FM120-M+ MMBT2222(A)LTTH1RU
1G.0AeSnUReFArCaElMPOuUNrTpSoCHsOeTTTKrYaBAnRsRIiEsRtRoErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Fre.
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