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NPN EPITAXIAL SILICON TRANSISTOR MMBT2222/ALT1
GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc(max)=225mW
Package:SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating 2222 2222A
Collector-Base Voltage
Vcbo
60
75
Collector-Emitter Voltage
Vceo
30
40
Emitter-Base Voltage
Vebo
5
6
Collector Current
Ic
600
Collector Dissipation Ta=25*
PD
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V V V mA mW
PIN: STYLE
NO 1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Max Unit
Test Conditions
Collector-Base Breakdown Voltage MMBT2222
60
BVcbo
MMBT2222A
75
V
Ic= 10uA Ie=0
Collector-Emitter Breakdown Voltage MMBT2222
30
BVceo
MMBT2222A
40
V
Ic= 10mA I
MMBT2222 Datasheet
