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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3 COLLECTOR
1 BASE
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
V CEO V CBO V EBO
IC
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
2222 30 60 5.0 600
2222A 40 75 6.0 600
Unit Vdc Vdc Vdc mAdc
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.8 mW/°C 556 °C/W 300 mW
2.
MMBT2222ALT1 Datasheet
