SBR13003B1 - NPN Power Transistor

Datasheet Summary

Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Features

Very High Switching Speed.
High Voltage Capability.
Wide Reverse Bias SOA General.

WINSEMI SEMICONDUCTOR

📥 Download Datasheet

Datasheet Details

Part number	SBR13003B1
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	282.81 KB
Description	NPN Power Transistor
Datasheet	SBR13003B1 Datasheet
Additional preview pages of the SBR13003B1 datasheet.

📁 Similar Datasheet

SBR13003 - High Voltage Fast-Switching NPN Power Transistor (SemiWell Semiconductor)
SBR130S3 - Super barrier rectifier (APD)
SBR130S3 - SUPER BARRIER RECTIFIER (Diodes)
SBR130SV - SUPER BARRIER RECTIFIER (Diodes)
SBR10 - SENSOR (Sensor Switch)
SBR10 - (SBR05 - SBR30) Standard Recovery 1-Phase Silicon Bridge Rectifier Assembly (Semtech Corporation)
SBR100-10J - SBR100-10J (Sanyo Semicon Device)
SBR100-10JS - 100V 10A Rectifier (Sanyo Semicon Device)
SBR100-16JS - 160V 10A Rectifier (Sanyo Semicon Device)
SBR10100 - 10.0 Amp Schottky Barrier Rectifiers (Secos)

Other Datasheets by WINSEMI SEMICONDUCTOR

Full PDF Text Transcription

Click to expand full text

SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP = 5ms 1.5 25 1.

Published: Jan 6, 2011 |