WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor

WINSEMI SEMICONDUCTOR

Description

WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor .
General purpose swithhing and phase control applications.

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Datasheet Specifications

Part number: WTPB12A60CW
Manufacturer: WINSEMI SEMICONDUCTOR
File Size: 270.49 KB
Datasheet: WTPB12A60CW_WINSEMISEMICONDUCTOR.pdf
Description: Sensitive Gate Bi-Directional Triode Thyristor

Features

* Repetitive Peak off-State Voltage: 600V
* R. M. S On-State Current(IT(RMS)=12A
* Low on-state voltage: VTM=1.55V(Max. )@ IT=17A

Applications

* These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings Symbol VDRM/VPRM IT(RMS) ITSM I

WTPB12A60CW Distributors

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WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor WINSEMI SEMICONDUCTOR

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