WTPB12A60CW

Sensitive Gate Bi-Directional Triode Thyristor

WINSEMI SEMICONDUCTOR

WTPB12A60CW Features

* Repetitive Peak off-State Voltage: 600V

* R.M.S On-State Current(IT(RMS)=12A

* Low on-state voltage: VTM=1.55V(Max.)@ IT=17A

* High Commutation dV/dt. General Description General purpose swithhing and phase control applications. These devices are intended to be interfaced directly

WTPB12A60CW General Description

General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. .

WTPB12A60CW Datasheet (270.49 KB)

WTPB12A60CW Datasheet Preview — Preview of WTPB12A60CW PDF

Datasheet Details

Part number:

WTPB12A60CW

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

270.49 KB

Description:

Sensitive gate bi-directional triode thyristor.

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WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor WINSEMI SEMICONDUCTOR

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WTPB12A60CW Features

WTPB12A60CW General Description

Datasheet Details

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Description:

WTPB12A60CW Distributor