WTPB16A60SW
WINSEMI SEMICONDUCTOR
400.41kb
Sensitive gate bi-directional triode thyristor. General purpose swiTJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, l
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WTPB12A60CW - Sensitive Gate Bi-Directional Triode Thyristor
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WTPB12A60CW Sensitive Gate
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Features
■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ .
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WTPA12A60SW - Bi-Directional Triode Thyristor
(Winsemi)
Features
� Repetitive Peak off -State Voltage:600V � R.M.S On-State Current(IT(RMS)=12A) � Low On-State Voltage (1.55V(Max.)@ITM � High Commutation dv.
WTPA12A80CW - Bi-Directional Triode Thyristor
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Features
� Repetitive Peak off -State Voltage:800V � R.M.S On-State Current(IT(RMS)=12A) � Low On-State Voltage (1.55V(Max.)@ITM � High Commutation dv.
WTPA16A60SW - Bi-Directional Triode Thyristor
(Winsemi)
WTPA16A60SW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=16A ■ Low on-state vol.
WTPA24A60BW - Bi-Directional Triode Thyristor
(WINSEMI SEMICONDUCTOR)
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Features
■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=24A ■.