WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor

WINSEMI SEMICONDUCTOR

Description

www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor .
General purpose swiTJhing and phase control applications.

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Datasheet Specifications

Part number: WTPB16A60SW
Manufacturer: WINSEMI SEMICONDUCTOR
File Size: 400.41 KB
Datasheet: WTPB16A60SW_WINSEMISEMICONDUCTOR.pdf
Description: Sensitive Gate Bi-Directional Triode Thyristor

Features

* Repetitive Peak off-State Voltage: 600V
* R. M. S On-State Current(IT(RMS)=16A
* Low on-state voltage: VTM=1.55V(Max. )@ IT=22.5A

Applications

* These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specifi

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WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor WINSEMI SEMICONDUCTOR

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