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WTPB4A60SW

Bi-Directional Triode Thyristor

WTPB4A60SW Features

* Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) High Commutation dv/dt High Junction temperature(TJ=150℃) General Description Standard gate triggering Triac is suitable for direct coupling to TTL,

WTPB4A60SW General Description

Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. Absolute Maximum Ratings (T = J 25°C unless otherwise spec.

WTPB4A60SW Datasheet (507.44 KB)

Preview of WTPB4A60SW PDF

Datasheet Details

Part number:

WTPB4A60SW

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

507.44 KB

Description:

Bi-directional triode thyristor.

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WTPB4A60SW Bi-Directional Triode Thyristor WINSEMI SEMICONDUCTOR

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