WG50N65DHJ1 - IGBT

WeEn

WG50N65DHJ1 Datasheet Preview — Preview of WG50N65DHJ1 PDF

Datasheet Details

Part number	WG50N65DHJ1
Manufacturer	WeEn
File Size	934.03 KB
Description	IGBT
Datasheet	WG50N65DHJ1-WeEn.pdf

WG50N65DHJ1 Product details

Description

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance.

Features

Positive Temperature efficient for Easy Parallel Operating.
High Current Capability.
Low saturation Voltage VCE(Sat) = 1.25 V(Typ. ) @ IC = 50 A.
EMI Improved Design 3.

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Published: Feb 11, 2025 |