WG50N65DHJ1 IGBT

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Description

WG50N65DHJ1 IGBT Rev.01 - 28 February 2024 Product data sheet 1.General .
WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage,.

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Datasheet Specifications

Part number: WG50N65DHJ1
Manufacturer: WeEn
File Size: 934.03 KB
Datasheet: WG50N65DHJ1-WeEn.pdf
Description: IGBT

Features

* Positive Temperature efficient for Easy Parallel Operating
* High Current Capability
* Low saturation Voltage VCE(Sat) = 1.25 V(Typ. ) @ IC = 50 A

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