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WG50N65LAW1 IGBT

WG50N65LAW1 Description

WG50N65LAW1 IGBT Rev.01 - 27 September 2023 Product data sheet 1.General .
WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minim.

WG50N65LAW1 Features

* Maximum junction temperature 175 °C
* Positive Temperature efficient for Easy Parallel Operating
* Very soft, fast recovery anti-parallel diode
* Low saturation Voltage VCE(sat) = 1.3 V(Typ. ) @ IC = 50 A

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Datasheet Details

Part number
WG50N65LAW1
Manufacturer
WeEn
File Size
869.98 KB
Datasheet
WG50N65LAW1-WeEn.pdf
Description
IGBT

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