WG50N65LAW1 Datasheet - WeEn

WG50N65LAW1 IGBT

WG50N65LAW1 Features

* Maximum junction temperature 175 °C

* Positive Temperature efficient for Easy Parallel Operating

* Very soft, fast recovery anti-parallel diode

* Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A

* EMI Improved Design 3. Applications

* Solar

Datasheet Details

WG50N65LAW1

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869.98 KB

Igbt.

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