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WG50N65LDJ1 IGBT

WG50N65LDJ1 Description

WG50N65LDJ1 IGBT Rev.01 - 18 May 2023 Product data sheet 1.General .
WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage,.

WG50N65LDJ1 Features

* Positive Temperature efficient for Easy Parallel Operating
* High Current Capability
* Low saturation Voltage VCE(Sat) = 1.25 V(Typ. ) @ IC = 50 A

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Datasheet Details

Part number
WG50N65LDJ1
Manufacturer
WeEn
File Size
878.17 KB
Datasheet
WG50N65LDJ1-WeEn.pdf
Description
IGBT

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