WG50N65LDJ1 Datasheet, Igbt, WeEn

WG50N65LDJ1 Features

• Igbt
• Positive Temperature efficient for Easy Parallel Operating
• High Current Capability
• Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
• EMI

PDF File Details

Part number:

WG50N65LDJ1

Manufacturer:

WeEn

File Size:

878.17kb

Download:

📄 Datasheet

Description:

Igbt. WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low o

WG50N65LDJ1 Application

• Applications RoHS halogen-Free 2. Features and benefits
• Positive Temperature efficient for Easy Parallel Operating
• High Curr

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