Part number:
WG50N65HDJ2
Manufacturer:
WeEn
File Size:
960.65 KB
Description:
Igbt.
* Maximum junction temperature 175 °C
* Positive temperature efficient for easy paralleling
* Very soft, fast recovery anti-parallel diode
* High speed switching
* EMI Improved Design 3. Applications
* PFC
* Solar converters
* UPS
WG50N65HDJ2 Datasheet (960.65 KB)
WG50N65HDJ2
WeEn
960.65 KB
Igbt.
📁 Related Datasheet
WG50N65HAW1 - IGBT
(WeEn)
WG50N65HAW1
IGBT
Rev.02 - 22 November 2024
Product data sheet
1. General description
WG50N65HAW1 uses advanced Fine Trench Field-stop IGBT technolog.
WG50N65HFW1 - IGBT
(WeEn)
WG50N65HFW1
IGBT
Rev.02 - 22 November 2024
Product data sheet
1. General description
WG50N65HFW1 uses advanced Fine Trench Field-stop IGBT technolog.
WG50N65DHJ - IGBT
(WeEn)
WG50N65DHJ
IGBT
Rev.01 - 23 July 2021
1. General description
High speed IGBT with anti-parallel diode in TO3PF package.
• High speed with low switchi.
WG50N65DHJ1 - IGBT
(WeEn)
WG50N65DHJ1
IGBT
Rev.01 - 28 February 2024
Product data sheet
1. General description
WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technolog.
WG50N65DHW - IGBT
(WeEn)
WG50N65DHW
IGBT
Rev.01 - 03 February 2021
Product data sheet
1. General description
High speed IGBT with anti-parallel diode in TO247 package.
RoHS.
WG50N65LAW1 - IGBT
(WeEn)
WG50N65LAW1
IGBT
Rev.01 - 27 September 2023
Product data sheet
1. General description
WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technolo.
WG50N65LDJ1 - IGBT
(WeEn)
WG50N65LDJ1
IGBT
Rev.01 - 18 May 2023
Product data sheet
1. General description
WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology wit.
WG50N65MDW1 - IGBT
(WeEn)
WG50N65MDW1
IGBT
Rev.01 - 22 November 2023
Product data sheet
1. General description
WG50N65MDW1 uses advanced Fine Trench Field-stop IGBT technolog.