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WG50S65HAW1 IGBT

WG50S65HAW1 Description

WG50S65HAW1 IGBT Rev.02 - 25 November 2024 Product data sheet 1.General .
WG50S65HAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and excel.

WG50S65HAW1 Features

* Maximum junction temperature 175 °C
* Positive Temperature efficient for easy paralleling
* Very soft, fast recovery anti-parallel diode
* High switching speed

WG50S65HAW1 Applications

* PFC
* Solar converters
* UPS
* Welding Converters
* Mid to high range switching frequency converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE Collector-emitter voltage, Tj ≥ 25 °C IC Symbol DC collector current, limit

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Datasheet Details

Part number
WG50S65HAW1
Manufacturer
WeEn
File Size
897.34 KB
Datasheet
WG50S65HAW1-WeEn.pdf
Description
IGBT

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