2SB1116 - PNP General Purpose Transistor
2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -60 -50 -6.0 1000 1116A -80 -60 -6.0 Unit V V V mA THERMAL CHARACTERISTICS Charact er ist ics Total Device Dissipation Alumina Substrate,TA=25°C Junction Temperature Storage Temperature Symbol PD TJ Ts
