W364M72V-XSBX Datasheet - White Electronic Designs Corporation

W364M72V-XSBX 64Mx72 Synchronous DRAM

The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 512M bits. Each chip is internally conﬁgured as a quadbank DRAM with a synchronous interface. Each of the chip’s 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits. Read a.

W364M72V-XSBX Features

* High Frequency = 100, 125MHz Package:

* 219 Plastic Ball Grid Array (PBGA), 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Inter

W364M72V-XSBX Datasheet (527.54 KB)