WGF10N65SE - 650V N-Channel MOSFET
WGF10N65SE Features
* Low Intrinsic Capacitances.
* Excellent Switching Characteristics. r
* Extended Safe Operating Area. o
* Unrivalled Gate Charge :Qg=35nC (Typ.). t
* BVDSS=650 V,ID=10A c
* RDS(on) : 0.9 Ω (Max) @VG=10V u
* 100% Avalanche Tested D(2) G(1)
