WGF10N65SE - 650V N-Channel MOSFET

Datasheet Details

Low Intrinsic Capacitances.
Excellent Switching Characteristics. r.
Extended Safe Operating Area. o.
Unrivalled Gate Charge :Qg=35nC (Typ. ). t.
BVDSS=650 V,ID=10A c.
RDS(on) : 0.9 Ω (Max) @VG=10V u.
100% Avalanche Tested D(2) G(1) ndS(3) ico Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) 1.Gate (G) 2.Drain (D) 3.Source (S) Sy mbol VDSS ID VGSS E AS IAR PD Tj T stg Drain-Source Voltage Drain Current Sem Parameter.

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Published: May 29, 2025 |