WGF65R850 - 650V N-Channel MOSFET

Datasheet Details

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=12 nC(Typ. ).
VDSS=650 V,ID=6A.
RDS(on) : 0.85 Ω (Max) @VG=10V.
100% Avalanche Tested D(2) G(1) S(3) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS ID VGSS E AS IDM PD Tj Tstg dv/dt Drain-Source Voltage Drain Current Gate-Source Voltage Single Pulse Avalanche Energy (not.

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Published: Jun 9, 2025 |