WGF65R850 - 650V N-Channel MOSFET
WGF65R850 Features
* Low Intrinsic Capacitances.
* Excellent Switching Characteristics.
* Extended Safe Operating Area.
* Unrivalled Gate Charge :Qg=12 nC(Typ.).
* VDSS=650 V,ID=6A
* RDS(on) : 0.85 Ω (Max) @VG=10V
* 100% Avalanche Tested D(2) G(1) S(3) Absolu
