WGF18N65 - 650V N-Channel MOSFET
WGF18N65 Features
* Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Extended Safe Operating Area
* Unrivalled Gate Charge :Qg= 50nC (Typ.)
* BVDSS=650V,ID=18A
* RDS(on) :0.42 Ω (Max) @VG=10V
* 100% Avalanche Tested GD S G! D !
* ◀▲
