WGF18N65 - 650V N-Channel MOSFET

Datasheet Details

Low Intrinsic Capacitances .
Excellent Switching Characteristics .
Extended Safe Operating Area .
Unrivalled Gate Charge :Qg= 50nC (Typ. ).
BVDSS=650V,ID=18A.
RDS(on) :0.42 Ω (Max) @VG=10V.
100% Avalanche Tested GD S G! D !.
◀▲.
! S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Curr.

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Published: Mar 17, 2018 |