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WNM2020 - N-Channel MOSFET

Description

The WNM2020 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23.

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Datasheet preview – WNM2020

Datasheet Details

Part number WNM2020
Manufacturer Will Semiconductor
File Size 188.60 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2020 Datasheet
Additional preview pages of the WNM2020 datasheet.

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Full PDF Text Transcription

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WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V WNM2020 Http//:www.willsemi.com Descriptions SOT-23 The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free.
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