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WNM2029 - N-Channel MOSFET

General Description

The WNM2029 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-323.

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Datasheet Details

Part number WNM2029
Manufacturer Will Semiconductor
File Size 88.73 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2029 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2029 Single N-Channel, 20V, 1.85A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.072@ VGS=4.5V 0.088@ VGS=2.5V 0.115@ VGS=1.8V ID (A) 1.8 1.5 1.0 WNM2029 Http//:www.willsemi.com Descriptions The WNM2029 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2029 is Pb-free.