WNM2021 Datasheet | Will Semiconductor

Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323 - 1 3 21- 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC-DC converter circuit Small Signal Switch Load Switch Level Shift WNM2021-3/TR Will Semiconductor Ltd. Dec, 2010 - Rev.1.0 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 0.89 0.71 0.37 0.23 0.78 0.62 0.29 0.18 1.4 150 260 -55 to 150 10 S Steady State 20 ±6 0.82 0.65 0.31 0.20 0.70 0.56 0.23 0.14 Unit V A W A W A °C °C °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State Symbol RθJA RθJA RθJC Typical 275 325 375 445 260 Maximum 335 395 430 535 300 Unit °C/W a b c d Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper Surface mounted on FR4 board using minimum pad size, 1oz copper Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. Dec, 2010 - Rev.1.0 Electronics Characteristics (Ta=25 C, unless otherwise noted) o Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Symbol Test Conditions Min Typ Max...