WNM2021 - N-Channel MOSFET

Will Semiconductor

General Description

The WNM2021 is N-Channel enhancement MOS Field Effect Transistor.

with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Key Features

z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323.
1 3 21.
2 21 = Device Code = Month (A~Z) Marking.

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WNM2021 n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNM2021
Manufacturer	Will Semiconductor
File Size	247.01 KB
Description	N-Channel MOSFET
Datasheet	WNM2021 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.35 SOT-323 Http//:www.willsemi.com Descriptions The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2021 is Pb-free.