WNM2021 Datasheet - Will Semiconductor

WNM2021 N-Channel MOSFET

The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2021 is Pb-free. 1 G 2 S Pin.

WNM2021 Features

* z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323

* 1 3 21

* 2 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC-DC con

WNM2021-WillSemiconductor.pdf