WNM2021 - N-Channel MOSFET
The WNM2021 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
Standard Product WNM2021 is Pb-free.
1 G 2 S Pin
WNM2021 Features
* z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323
* 1 3 21
* 2 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC-DC con
