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PFI6N80G

N-Channel MOSFET

PFI6N80G Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V APPLICATION  Low power battery charg

PFI6N80G Datasheet (907.05 KB)

Preview of PFI6N80G PDF

Datasheet Details

Part number:

PFI6N80G

Manufacturer:

Wing On

File Size:

907.05 KB

Description:

N-channel mosfet.

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PFI6N80G N-Channel MOSFET Wing On

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