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PFI8N50

N-Channel MOSFET

PFI8N50 Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts

PFI8N50 Datasheet (0.99 MB)

Preview of PFI8N50 PDF

Datasheet Details

Part number:

PFI8N50

Manufacturer:

Wing On

File Size:

0.99 MB

Description:

N-channel mosfet.

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PFI8N50 N-Channel MOSFET Wing On

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