PFI6N90EG Datasheet, Mosfet, Wing On

PFI6N90EG Features

• Mosfet  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30.5 nC

PDF File Details

Part number:

PFI6N90EG

Manufacturer:

Wing On

File Size:

862.41kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

PFI6N90EG

Wing On

📁 Related Datasheet

PFI6N90GN - N-Channel MOSFET (Wing On)
PFI6N90GN FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch.

PFI6N80G - N-Channel MOSFET (Wing On)
PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFI10N80A - N-Channel MOSFET (Wing On)
PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFI7N80G - N-Channel MOSFET (Wing On)
June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitance.

PFI8N50 - N-Channel MOSFET (Wing On)
Aug 2008 PFI8N50 / PFB8N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4..

PF0027 - MOS FET Power Amplifier Module (Renesas Technology)
.. .. .. .. .. .. .. .

PF0030 - MOS FET Power Amplifier (Hitachi Semiconductor)
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current.

PF0031 - MOS FET Power Amplifier Module (Hitachi)
w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application P.