Part number:
PFJ10N80
Manufacturer:
Wing On
File Size:
1.05 MB
Description:
N-channel mosfet.
Datasheet Details
PFJ10N80 Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V APPLICATION High current, High speed
Datasheet Details
PFJ10N80
Wing On
1.05 MB
N-channel mosfet.
📁 Related Datasheet
PFJ20N50 N-Channel MOSFET (Wing On)
PFJ20N60 N-Channel MOSFET (Wing On)
PFJ60R180 N-Channel Super Junction MOSFET (Wing On)
PFJ9N90 N-Channel MOSFET (Wing On)
PF0010 High Frequency Power MOS FET Module (Renesas Technology)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF0027 MOS FET Power Amplifier Module (Renesas Technology)
PF0030 MOS FET Power Amplifier (Hitachi Semiconductor)
PFJ10N80 Distributor