PFJ60R180 - N-Channel Super Junction MOSFET
PFJ60R180 Features
* New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain Gate
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* Source TO-247 TO-3P APPLICATION
