Part number:
PFJ20N50
Manufacturer:
Wing On
File Size:
0.98 MB
Description:
N-channel mosfet.
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 60 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION High current, High speed
PFJ20N50
Wing On
0.98 MB
N-channel mosfet.
📁 Related Datasheet
PFJ20N60 N-Channel MOSFET (Wing On)
PFJ10N80 N-Channel MOSFET (Wing On)
PFJ60R180 N-Channel Super Junction MOSFET (Wing On)
PFJ9N90 N-Channel MOSFET (Wing On)
PF0010 High Frequency Power MOS FET Module (Renesas Technology)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF0027 MOS FET Power Amplifier Module (Renesas Technology)
PF0030 MOS FET Power Amplifier (Hitachi Semiconductor)
PF0031 MOS FET Power Amplifier Module (Hitachi)
PF0032 MOS FET Power Amplifier (Hitachi Semiconductor)
