PFM1N70 - N-Channel MOSFET
PFM1N70 Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 4.8 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 Ω (Typ.) @VGS=10V APPLICATION Low power battery charg
