PFM1N80 - N-Channel MOSFET
PFM1N80 Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 7.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V APPLICATION Low power battery charger
