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PFU1N60

N-Channel MOSFET

PFU1N60 Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION  Low power battery charge

PFU1N60 Datasheet (960.82 KB)

Preview of PFU1N60 PDF

Datasheet Details

Part number:

PFU1N60

Manufacturer:

Wing On

File Size:

960.82 KB

Description:

N-channel mosfet.

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PFU1N60 N-Channel MOSFET Wing On

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