PFU2N70G Datasheet, Mosfet, Wing On

PFU2N70G Features

• Mosfet  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC

PDF File Details

Part number:

PFU2N70G

Manufacturer:

Wing On

File Size:

1.24MB

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

PFU2N70G

Wing On

📁 Related Datasheet

PFU2N100G - N-Channel MOSFET (Wing On)
PFU2N100G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch.

PFU2N60 - N-Channel MOSFET (Wing On)
Aug 2006 PFU2N60 / PFD2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFU2N65 - N-Channel MOSFET (Wing On)
July 2008 PFU2N65 / PFD2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFU1000 - High Power Resistors / High Voltage Resistors (Riedon)
PFU Series 1000 W & 800 W High Power Resistors / High Voltage Resistors • High Power Density • 0.5 Ohm to 1 Mohm • Very Low Inductance • Moisture res.

PFU1N60 - N-Channel MOSFET (Wing On)
Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFU1N70 - N-Channel MOSFET (Wing On)
Aug 2007 PFU1N70 / PFD1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFU3N70HG - N-Channel MOSFET (Wing On)
PFU3N70HG / PFD3N70HG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFU3N80 - N-Channel MOSFET (Wing On)
May 2011 PFU3N80 / PFD3N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFU3N80EG - N-Channel MOSFET (Wing On)
PFU3N80EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch.

PFU3N90EG - N-Channel MOSFET (Wing On)
PFU3N90EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch.