D1710 - Silicon Diffused Power Transistor

Description

Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PML CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAM

Wing Shing Computer

📥 Download Datasheet

Datasheet Details

Part number	D1710
Manufacturer	Wing Shing Computer
File Size	85.93 KB
Description	Silicon Diffused Power Transistor
Datasheet	D1710 Datasheet
Additional preview pages of the D1710 datasheet.

📁 Similar Datasheet

D1710 - Silicon NPN Power Transistor (SavantIC)
D171 - D171-Type FastLight PIN Photodetectors (Agere Systems)
D1711 - 2SD1711 (SavantIC)
D17133CS - UPD17133CS (NEC)
D17145CT - UPD17145CT (NEC)
D1716 - 2SD1716 (Inchange Semiconductor)
D1719G - UPD1719G (NEC)
D171C004BAA - D171-Type FastLight PIN Photodetectors (Agere Systems)
D171C004BAF - D171-Type FastLight PIN Photodetectors (Agere Systems)
D171C004CAN - D171-Type FastLight PIN Photodetectors (Agere Systems)

Other Datasheets by Wing Shing Computer

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com 2SD1710 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PML CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 1.0A f = 16KHz IF = 4.5A ICsat = 4.5A; f = 16KHz 1.6 0.5 MAX 1500 600 5 10 50 5.0 2.0 1.

Published: Nov 23, 2007 |