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WFF7N65S

650V Super-Junction Power MOSFET

WFF7N65S Features

* Ultra low Rdson

* Ultra low gate charge (typ. Qg =19nC)

* 100% UIS tested

* RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications

WFF7N65S General Description

Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Dra.

WFF7N65S Datasheet (313.18 KB)

Preview of WFF7N65S PDF

Datasheet Details

Part number:

WFF7N65S

Manufacturer:

Winsemi

File Size:

313.18 KB

Description:

650v super-junction power mosfet.

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WFF7N65S 650V Super-Junction Power MOSFET Winsemi

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