WSP8212 - Dual N-Channel MOSFET
The WSP8212 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WSP8212 meet the RoHS and Green Product requirement with full function reliability app
WSP8212 Features
* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSP8212 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 10mΩ ID 11A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UM
