WFF2N60 Datasheet - Wisdom technologies

WFF2N60 N-Channel MOSFET

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, activ.

WFF2N60 Features

* RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain

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WFF2N60_Wisdomtechnologies.pdf