WFF4N60 Datasheet (Wisdom technologies)

WFF4N60, N-Channel MOSFET

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

These devices are well suited for high efficiency switch mode power supplies, activ

WFF4N60 Features

* RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain

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