WFF4N60 Datasheet - Wisdom technologies

WFF4N60 N-Channel MOSFET

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, activ.

WFF4N60 Features

* RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain

* www.DataSheet4U.com

* 1. Gate { ▲

* { 3. Source General Desc

WFF4N60_Wisdomtechnologies.pdf