Part number:
WFF4N65S
Manufacturer:
Winsemi
File Size:
149.76 KB
Description:
650v super-junction power mosfet.
* Ultra low Rdson
* Ultra low gate charge (typ. Qg =13nC)
* 100% UIS tested
* RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications
WFF4N65S Datasheet (149.76 KB)
WFF4N65S
Winsemi
149.76 KB
650v super-junction power mosfet.
📁 Related Datasheet
WFF4N65 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFF4N65
N-Channel MOSFET
Features
■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, Hig.
WFF4N65L - Silicon N-Channel MOSFET
(Winsemi)
WFF4N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 10.
WFF4N60 - Silicon N-Channel MOSFET
(Winsemi)
Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt.
WFF4N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High .
WFF4N60C - Silicon N-Channel MOSFET
(Winsemi)
Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt.
WFF - Fast Fusible Metal Film Resistors
(Welwyn Components Limited)
Fast Fusible Metal Film Resistors
WFF Series
Welwyn Components
• • •
Low power fusing Predictable fusing characteristics Flameproof protection
.
WFF10N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFF10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.
WFF10N60 - Silicon N-Channel MOSFET
(WINSEMI SEMICONDUCTOR)
.DataSheet.in
WFF10N60
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .