Datasheet Details
- Part number
- WFF4N65S
- Manufacturer
- Winsemi
- File Size
- 149.76 KB
- Datasheet
- WFF4N65S-Winsemi.pdf
- Description
- 650V Super-Junction Power MOSFET
WFF4N65S Description
WFF4N65S Product .
650V Super-Junction Power MOSFET
Features.
Ultra low Rdson.
Ultra low gate charge (typ.
100% UIS tested.
RoHS compliant.
WFF4N65S Features
* Ultra low Rdson
* Ultra low gate charge (typ. Qg =13nC)
* 100% UIS tested
WFF4N65S Applications
* which require superior power density and outstanding efficiency. Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Continuous Drain Current (Tc=25℃) ID
(Tc=100℃)
Parameter
I DM
Drain Current Pulsed 1)
VGS
Gate to Source Voltage
EAS
Single Pulse Avalanche Energy 2)
I AR
Single P
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