WFF4N65S Datasheet - Winsemi

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WFF4N65S 650V Super-Junction Power MOSFET

WFF4N65S Product .
650V Super-Junction Power MOSFET Features. Ultra low Rdson. Ultra low gate charge (typ. 100% UIS tested. RoHS compliant.

WFF4N65S-Winsemi.pdf

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Datasheet Details

Part number:

WFF4N65S

Manufacturer:

Winsemi

File Size:

149.76 KB

Description:

650V Super-Junction Power MOSFET

Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =13nC)
* 100% UIS tested

Applications

* which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Continuous Drain Current (Tc=25℃) ID (Tc=100℃) Parameter I DM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) I AR Single P

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WFF4N65S 650V Super-Junction Power MOSFET Winsemi

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