WFF4N65S Datasheet, Mosfet, Winsemi

WFF4N65S Features

• Mosfet � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. Th

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WFF4N65S

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Winsemi

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📄 Datasheet

Description:

650v super-junction power mosfet. 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS complian

WFF4N65S Application

• Applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Continu

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WFF4N65S

Winsemi

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