Super-Junction Datasheet | Specifications & PDF Download

HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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NCE70T540I，NCE70T540K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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PFP65R380 / PFF65R380 PFP65R380 / PFF65R380 FEATURES N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(ON) and l

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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SJMN3 8 0 R7 0 F Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s • Drain-Source volt age: VDS=750V (@TJ=150°C) • Low drain-source

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NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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NCE65T540I，NCE65T540K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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WML26N60C2, WMK26N60C2 WMN26N60C2, WMM26N60C2, WMJ26N60C2 600V 0.16Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation supe

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NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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TPA90R350A,TPB90R350A,TPP90R350A,TPW90R350A Wuxi Unigroup Microelectronics Co.,Ltd 900V Super-junction Power MOSFET Description 900V Super-junction P

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NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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